MJE13009 high voltage fast-switching npn power transistor n stmicroelectronics preferred salestype n high voltage capability n minimum lot-to-lot spread for reliable operation n low base-drive requirements n very high switching speed n fully characterized at 125 o c applications n electronic transformer for halogen lamps n switch mode power supplies description the MJE13009 is a high voltage multiepitaxial mesa npn transistor mounted in jedec to-220 plastic package. it uses a hollow emitter structure to enhance switching speeds. ? internal schematic diagram november 2002 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v ceo collector-emitter voltage (i b = 0) 400 v v cev collector-emitter voltage (v be = -1.5 v) 700 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 12 a i cm collector peak current (t p 10 ms) 25 a i b base current 6 a i bm base peak current (t p 10 ms) 12 a i e emitter current 18 a i em emitter peak current 36 a p tot total power dissipation at t c 25 o c 110 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1/6
thermal data r thj-case thermal resistance junction-case max 1.14 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v eb = -1.5 v) v ce = 700 v v ce = 700 v t case = 100 o c 1 5 ma ma i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 5 a i b = 1 a i c = 8 a i b = 1.6 a i c = 12 a i b = 3 a i c = 8 a i b = 1.6 a t case = 100 o c 1 1.5 3 2 v v v v v be(sat) * base-emitter saturation voltage i c = 5 a i b = 1 a i c = 8 a i b = 1.6 a i c = 8 a i b = 1.6 a t case = 100 o c 1.2 1.6 1.5 v v v h fe * dc current gain i c = 5 a v ce = 5 v i c = 8 a v ce = 5 v 8 6 40 30 f t transition frequency i c = 500 ma v ce = 10 v 4 mhz c ob output capacitance (i e = 0) v cb = 10 v f = 0.1 mhz 180 pf t on t s t f resistive load turn-on time storage time fall time v cc = 125 v i c = 8a i b1 = -i b2 = 1.6 a t p = 25 m s duty cycle 1 (see figure 2) 1.1 3 0.7 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle 2 % safe operating areas derating curve MJE13009 2/6
dc current gain collector emitter saturation voltage inductive load fall time dc current gain base emitter saturation voltage inductive load storage time MJE13009 3/6
reverse biased soa figure 1: inductive load switching test circuit figure 2: resistive load switching test ciurcuit 1) fast electronic switch 2) non-inductive resistor 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier MJE13009 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data MJE13009 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com MJE13009 6/6
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